Abstract
Chalcogenide alloys in the Ge-Sb-Te system are promising for application in phase-change memory devices. We investigated the influence of bismuth on the optical properties of Ge2Sb2Te5 thin films and established that the bismuth doping in them allows the optical contrast of the thin films to be increased by about 30% at a wavelength of 400 nm. The experimental results are explained in an assumption on the impurity substitution of bismuth for antimony.
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