Abstract
Despite considerable progress achieved over the past few years in understanding ultrathin oxynitrides, several fundamental questions, in particular the oxynitridation mechanism, and the mechanisms behind the beneficial role of nitrogen, are still not well understood. To better understand the explanations which have been proposed for the phenomena specific to silicon oxynitride and for the nature of the defects, a study of the electron structure of a MOS system using silicon oxynitrides as the gate oxide and based on a first-principle molecular dynamic method, was carried out.
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