Abstract
Se50Te50 alloy has been successfully fabricated utilizing the common melt quench technique. The Se50Te50 film was deposited onto a well-cleaned glass substrate at 298 K by thermal evaporation method. The film's thickness (~500 nm) was monitored by a quartz crystal monitor. Dielectric permittivities (ε′,ε″), dissipation factor, tan(δ), conductivity, σAC, modulus (M′,M″) and impedance parts (Z′,Z″)were determined based on the capacitance-voltage (Cm–V) and conductance-voltage (Gm/ω-V) measurements. AC electrical conductivity has two contributes, electronic and ionic conductivity. The main structural characteristics were checked utilizing EDAX, X-ray and SEM measurements.
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