Abstract
The structural variation and electrical properties in both as-deposited and annealed amorphous silicon ruthenium thin film are investigated. Results indicate that the introduced Ru atoms further degrade the amorphous network order and Ru2Si nanocrystals are found in the as-deposited sample. The phase transformation of ruthenium silicide and the formation of Si nanocrystals are observed after annealing treatment. Significant resistivity reduction is obtained with the increase of Ru concentration. This material is a potential candidate for infrared detectors.
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