Abstract
The article is devoted to solving the problem of automation of the calculations and analysis of the defect structure of dislocation-free silicon single crystals. As a result, of development of information system kinetics of interaction of point defects at any time of crystal growth or heat treatments can be investigated. The solution to this problem will allow to simulate and to grow crystals with a predetermined defect structure, as well as manage it in the processes in subsequent technological treatments. The article presents the main aspects of information system for defect engineering of the dislocation-free silicon single crystals. The software structure and technology implementation has been considered. Structural scheme<b> </b>of information system was presented. It is assumed that with the help of this information system will be possible to control the defect structure at various stages of manufacture of devices based on silicon.
Highlights
Modern electronic technology makes extremely h igh demands on the perfection of the crystal structure and homogeneity of distribution of electrical parameters in the bulk of grown single crystals and wafers made fro m them
The main advantage of the diffusion model is dependence of characteristics of grown-in microdefects on the crystal growth parameters. This allo wed us to create a new technique for the study of the dislocation-free silicon single crystals defect structure on the basis of modern informat ion technology[8]. With this technique we have developed software for analysis of the defect structure of dislocation-free silicon single crystals grown by the Czochralski method and floating zone melting with diameters fro m 30 mm to 450 mm[8]
To address deficiencies and the accounting impact of technological treatments on the defect structure of silicon we propose to create a new model of information system using language C# on the platform .NET
Summary
Modern electronic technology makes extremely h igh demands on the perfection of the crystal structure and homogeneity of distribution of electrical parameters in the bulk of grown single crystals and wafers made fro m them. The influence of thermal conditions is investigated on the basis of mathematical models that describe the processes of formation of grown-in microdefects in the grown single crystals In these models take into account the absence of recomb ination of own interstitial ato ms and vacancies in the crystal near the crystallizat ion front, and they allow you to Science and Technology 2012, 2(5): 130-134 predict the nature, size, density and distribution of grown-in microdefects in the bulk ingots[2]. The main advantage of the diffusion model is dependence of characteristics of grown-in microdefects on the crystal growth parameters (growth rate, temperature gradients, cooling rate and the crystal diameter) This allo wed us to create a new technique for the study of the dislocation-free silicon single crystals defect structure on the basis of modern informat ion technology[8]. The aim of our work is consideration establishing a informat ion system for defect engineering in dislocation-free silicon single crystals based on an software which first declared in[8]
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