Abstract
The article is devoted to solving the problem of automation of the calculations and analysis of the defect structure of dislocation-free silicon single crystals. As a result, of development of information system kinetics of interaction of point defects at any time of crystal growth or heat treatments can be investigated. The solution to this problem will allow to simulate and to grow crystals with a predetermined defect structure, as well as manage it in the processes in subsequent technological treatments. The article presents the main aspects of information system for defect engineering of the dislocation-free silicon single crystals. The software structure and technology implementation has been considered. Structural scheme<b> </b>of information system was presented. It is assumed that with the help of this information system will be possible to control the defect structure at various stages of manufacture of devices based on silicon.
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