Abstract
SiO2 thin films have been prepared by plasma-enhanced chemical vapor deposition from SiH4 and N2O precursors by using different values of the N2O/SiH4 flow ratio (γ). Rutherford backscattering spectrometry has been employed to obtain the O/Si atomic ratio of the films. Infrared spectroscopy has demonstrated that oxides having the same O/Si atomic ratio are characterized by a different structure. Indeed, from the analysis of the Si–O–Si stretching peaks, we have found that the peak frequency and full-width at half-maximum (FWHM) are dependent on γ. Peak position and FWHM have been used to calculate the bond angle distribution of the films. The results have demonstrated the occurrence of a Si–O–Si bond angle relaxation phenomenon in films deposited by using a larger excess of N2O.
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