Abstract
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH4) and nitrous oxide (N2O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO2 film fabricated. The effects of radio frequency (RF) power chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied. The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio .Moreover, the formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry C-V measurement show that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MIS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. The deposited SiO2 films have good uniformity, compact structure, high deposition rate, low deposition temperature and controllable stress, which can be widely, used in semiconductor devices.
Highlights
Silicon dioxide thin films are widely used in semiconductor device technology as gate insulators, for passivation and as intermetallic dielectric layers
We have mainly investigated the influence of the N2O/SiH4 flow ratio by using Rutherford backscattering spectrometry (RBS), ellipsometry and infrared (IR) spectroscopy
The plot of deposition rate as a function of chamber pressure is shown in Fig.3 at various units of radio-frequency (RF) power
Summary
Silicon dioxide thin films are widely used in semiconductor device technology as gate insulators, for passivation and as intermetallic dielectric layers. We present some results on the chemical and structural properties of SiO2 thin films prepared by PECVD from silane (SiH4) and N2O precursors. The chamber pressure was set to be 40 Pa. The oxidation thickness and refractive index of the SiO2 films were measured by an ellipsometer Auto EL-AV.
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