Low temperature deposition: Properties of SiO2 films from TEOS and ozone by APCVD system

Abstract

An Atmospheric Pressure Chemical Vapor Deposition (APCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used and they were mixed into the APCVD system. The deposition temperatures were very low, from 125 to 250 °C and the deposition time ranged from 1 to 15 minutes. The measured thicknesses from the deposited SiO2 films were between 5 and 300 nm. From the by Fourier-Transform Infrared (FTIR) spectra the typical absorption bands of the Si-O bond were observed and it was also observed a dependence on the vibrational modes corresponding to hydroxyl groups with the deposition temperature where the intensity of these vibrations can be related with the grade porosity grade of the films. Furthermore an analytical model has been evoked to determine the activation energy of the reactions in the surface and the gas phase in the deposit films process.