Structural Properties of Silicon Thin Films Prepared by Hot-Wire-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition

Abstract

Hydrogenated amorphous silicon films and microcrystalline silicon films were prepared by hot-wire-assisted electron cyclotron resonance chemical vapor deposition. The structural properties of the films were analyzed using infrared absorption spectroscopy, Raman scattering spectroscopy, spectroscopic ellipsometry and low-energy absorption by the constant-photocurrent method. It was found that the film properties were controlled smoothly by changing the hot-wire temperature. The amorphous structure of the film becomes dense, and the film changes to amorphous–microcrystalline mixed-phase film with increasing hot-wire temperature.