Abstract
This chapter deals with amorphous silicon carbide films (a-Si1–xCx:H), its optical, structural, and electrical properties. It provides a good understanding of the current directions and the potential applications of a-Si1–xCx:H. Furthermore, fundamental and technological challenges, which have to be overcome are also highlighted. Hydrogen and carbon atoms and their possible chemical bonds affect the optical, structural, and electrical properties of the silicon carbide (SiC) films. This chapter presents various techniques for the preparation of Si1–xCx:H films: (1) Plasma-Enhanced Chemical Vapor Deposition (PECVD) or glow discharge, (2) induced Chemical Vapor Deposition (CVD), (3) Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD), and (4) sputtering. This chapter discusses the most common parameters used in the investigation of the optical properties of a-Si1–xCx:H films. This chapter also includes a discussion of the way new preparation conditions, techniques, and source materials have been used to improve the optical properties of a-Si1–xCx:H films. This chapter presents the structural methods employed in the characterization of a-Si1–xCx:H films. The investigation methods used to find the electric properties of a-Si1–xCx:H films are also discussed.
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