Abstract
Structural properties of Si and Mg doped and undoped Al 0.13Ga 0.87N layers grown on sapphire substrates by metalorganic chemical vapor deposition were studied using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. For both low SiH 4 and low Cp 2Mg flow rates, the full width at half maximum values of rocking curve and total threading dislocation density in Al 0.13Ga 0.87N layers rapidly decrease due to the increased island size by surfactant effect. The origin of the broadening of HRXRD rocking curve in Al 0.13Ga 0.87N layers with high SiH 4 and Cp 2Mg flow rates results from the increase of total threading dislocation density and stacking fault density, respectively. Beside, it was observed that while for Si doping the lattice constant c is decreased continuously with the SiH 4 flow rate, the lattice constant c of Mg doped AlGaN layers is rapidly increased with a Cp 2Mg flow rate of 3.172 μmol/min.
Published Version
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