Abstract
We report on molecular beam epitaxy and hot-wall beam epitaxy growth of ZbTe epilayers on (001) GaAs substrates. The surface reconstruction of (001) ZnTe is measured by reflection high-energy electron diffraction (RHEED). The RHEED pattern as a function of the beam equivalent pressure ratio p Te/ P Zn and substrate temperature is studied. Mosaic structures of the ZnTe epilayers grown under optimized conditions are investigated quantitatively by high resolution X-ray diffraction and photoluminescence. These data, which are related to the three-dimensional perfection of epilayers, are contrasted to RHEED measurements of the surface morphology.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
