Abstract
In-Se films were deposited by direct evaporation of an InSe chunk using hot-wall-type evaporation equipment. The crystal structure was studied by X-ray diffraction using the Cu Kα line and the crystallographic properties of the films, such as the half width of the diffraction peak and the standard deviation of the rocking curve, were estimated as a function of the preparative conditions. It was found that films with a thickness above the critical value had a preferred (0001) orientation and that this critical thickness depended both on the substrate and on the source temperatures. In the present study, the films grown at 320°C with T so in the range from 550 to 570°C had the highest orientation.
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