Abstract
Heavily B-doped SiGe thin films was reported to have large thermoelectric power and power factor at room temperature after annealing. In this paper, we investigated the structures that give rise to the large thermoelectric power and power factor. The thin films were prepared by ionbeam sputtering method. The annealing temperature dependence of structural properties was investigated. The thin films exhibited large thermoelectric power (1.4 mVK � 1 ) and power factor (6:8 � 10 � 3 Wm � 1 K � 2 ) at room temperature after annealing at around 900 K. At that region, crystallite diameter was below 10 nm. The structure changed from amorphous to microcrystalline over 900 K. It is considered that quantum size effect enhances the thermoelectric power and power factor. [doi:10.2320/matertrans.E-M2010806]
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
