Abstract
Epitaxial (GaAs)1-x(Si2)x alloy layers (0<x<0.25) were grown on GaAs (100) substrates using Migration-Enhanced Epitaxy. Structural and compositional analysis of the as-grown (GaAs)1-x(Si2)x layers indicated single-crystal zincblende structure with no evidence of phase separation throughout the entire compositional range. The lattice constant a0 of the alloys was found to decrease linearly with increasing Si content from 0.56543 nm at x=0 to 0.5601 nm at x=0.25. Double crystal X-ray rocking curve measurements and cross-sectional transmission electron microscopy studies made on a 10 period (GaAs)0.80(Si2)0.20/GaAs strained-layer superlattice indicated sharp and abrupt interfaces of high crystalline quality.
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