Abstract
AbstractThis paper reviews the structural properties of ternary chalcopyrite absorbers for solar‐cell device applications studied by Raman Spectroscopy. Raman mode assignment in CuGaSe2 is reviewed according to the results of previous and present Raman and IR spectroscopic studies. The compositional dependence of Raman modes, in particular, the composition dependent frequency shift of the A1‐mode, is suggested for the analysis of the chalcopyrite film structure. Order and disorder effects are discussed with reference to the excitation of phonon modes assigned to Cu–Au ordered phases and to defect related phases, respectively. Phase separation effects associated with the formation of secondary microcrystalline CuxSe‐ or CuxS‐phases and the observation of Raman scattering from these phases are also discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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