Structural properties of AlN films deposited by plasma‐enhanced atomic layer deposition at different growth temperatures

Abstract

AbstractCrystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characteristic of an ALD process. At higher temperatures (>225 °C), deposition rate increased with temperature. Chemical composition, crystallinity, surface morphology, mass density, and spectral refractive index were studied for AlN films. X‐ray photoelectron spectroscopy (XPS) analyses indicated that besides main AlN bond, the films contained AlON, AlO complexes, and AlAl metallic aluminum bonds as well. Crystalline hexagonal AlN films were obtained at remarkably low growth temperatures. The mass density increased from 2.65 to 2.96 g/cm3 and refractive index of the films increased from 1.88 to 2.08 at 533 nm for film growth temperatures of 100 and 500 °C, respectively.