Abstract
III-Nitride-based diluted magnetic semiconductors, AlCrN, GaCrN and InCrN layers were grown by plasma-assisted molecular beam epitaxy and their structural properties were characterized. Relatively lower temperature growth enables the growth of AlCrN, GaCrN and InCrN alloys with higher Cr contents, while higher temperature growth induces variety of phase separations in each Cr-doped AlN, GaN and InN systems. Radial distances from Cr atoms to the first nearest neighbor N atoms are not much different, while that to the second nearest neighbor cation atoms is changed following each lattice constants in AlCrN, GaCrN and InCrN. Crystal field splitting of Cr d level in AlCrN and GaCrN was also observed in X-ray absorption near-edge structure (XANES) spectra.
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