Structural properties, bandgap, and complex dielectric function in Bi2Te3 thermoelectric by Valence Electron Energy Loss Spectroscopy (VEELS) analysis

Abstract

This article describes the results and discussion performed to analyze the bandgap, optoelectronic properties, and complex dielectric function of Bi2Te3 thermoelectric material, using Valence Electron Energy Loss Spectroscopy. A key aspect of the report presented in this article is that the properties described above have not been analyzed and reported using the Valence Electron Energy Loss Spectroscopy technique. The material’s structure was analyzed using Rietveld and High-Resolution Transmission Electron Microscopy techniques. The band gap obtained value is 0.91 eV by Valence Electron Energy Loss Spectroscopy. Whereas, values obtained by other techniques are between 0.26 and 0.92 eV for Bi2Te3. The real part (ε1) and imaginary part (ε2) of the complex dielectric function (ε * ) were measured. For ε1, the principal peak at 1.03 eV and a second peak at 1.4 eV were observed. Furthermore, the optical dielectric constant is 8.6 for (ε0 = 0 eV), which is related to electronic contributions and is given by the refractive index squared (n2).