Abstract
In this paper, we report structural changes in InGaN micro-structures grown by using mixed-source hydride vapor phase epitaxy (HVPE). Hexagonal nanorods, bunched with many submicron-sized legs and tetrapod-shaped InGaN micro-structures, are grown on r-plane sapphire, c-plane sapphire and Si (111) substrates. As the growth temperature is increased, the overall shape of the InGaN structures changes from clusters of some needle-like legs to bunch shapes of many legs with thicker and hexagonal edges. The grown InGaN structures were analyzed by using X-ray photoelectron spectroscopy (XPS) to characterize the InGaN ternary crystal alloy. The indium mole fractions of the InGaN structures grown at 650 C, 700 C and 750 C were 44 %, 37 % and 27 %, respectively.
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