Abstract
N2 + nitrogen ions with an energy of 50 keV were implanted into Al6061-T6 alloy with high dose (1016 − 2 × 1017 ions/cm2) at room temperature in order to form thin aluminium nitride (AlN) layers. The structural-phase changes in implanted Al 6061-T6 alloy were investigated using Rutherford back-scattering and transmission electron microscopic techniques. The results indicate that nitrogen implantation led to the formation of nitride phases (AlN, Al7N3C3) which improved the surface hardness by 80% and increased the electrical resistance up to 1800% at maximum dose (2 × 1017 ions/cm2).
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