Structural Origin of Bulk Molecular Hydrogen in Hydrogenated Amorphous Silicon

Abstract

AbstractThe elastic anomaly observed previously at the triple point of bulk molecular hydrogen in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition has also been observed in deuterated films at the triple point of D2. The origin of this anomaly has now been traced to bubbles formed at the crystalline-amorphous interface. An upper limit of the pressure in these bubbles at their formation temperature, 440°C, has been estimated to be 11 MPa, and is suggested to be a measure of the bonding strength between film and substrate at that temperature. Bubble formation after heat treatment at 400°C has also been observed in films prepared by plasma-enhanced chemical-vapor deposition. The internal friction anomalies resemble those observed previously in cold-worked hydrogenated iron where they have been interpreted through plastic deformation of solid hydrogen in voids.