Abstract
From temperature dependence of thermoelectric power and dc conductivity measurements [1] on bulk amorphous GexSe1-x samples (x = 10, 20, 30, 40) a dimensionless structural parameter ‘A-r/k’ was computed from intercept of thermoelectric power versus reciprocal temperature (1/T) plots. Based on ‘A-r/k’ and the slope ‘M’ of thermoelectric power versus logarithm of resistivity (ln ρ) plots, it was found that as Se content decreases, the bulk amorphous samples exhibit a transition from chalcogenides to tetrahedrally bonded amorphous semiconductors. There is a widespread agreement that tetrahedrally coordinated amorphous semiconductors crystallise at much higher temperature then the lone pair chalcogenide glasses. Therefore a decrease in Se content is considered as increase in the hardness of the samples.
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