Structural Optimization of the GaAs-Based Resonant Tunneling Diodes

Abstract

Structural optimization for the highly sensitive mechanical sensor elements was studied. Using Molecular Beam Epitaxy (MBE) technology, three different RTD structures were fabricated on the GaAs substrates. From the I-V characterizations, it can be concluded that, the PVCR of the best design is up to 6, VP is reduced to 0.41V, and then we analyzed the relationship between the device material structure and I-V characteristics, providing a reference for the better performance of RTD structure design.