Abstract
Copper Gallium selenide films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6–50% at room temperature and at a constant current density of 2mAcm−2. The films exhibited single phase Copper Gallium selenide. Optical band gap of the films varied in the range of 1.68eV. Room temperature resistivity of the films is in the range of 0.5–14.0Ωcm. Photoconductivity measurements were made at room temperature. Photocurrent spectra exhibited maximum corresponding to the band gap of Copper Gallium selenide.
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