Abstract
Copper gallium selenide films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6 - 50 % at room temperature and at a constant current density of 5 mA cm-2. The films exhibited single phase Copper gallium selenide. Optical band gap of the films varied in the range of 1.68 eV. Surface morphology of the films indicated an increase of grain size from 25 nm to 40 nm with increase of duty cycle. A single Photoluminescence peak was observed at 1.64 eV.
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