Abstract

Antimony sulphide thin films have been developed by the dip method. The obtained thin films were undergone heat treatment up to 473 K in the atmosphere. The variation in properties of antimony sulphide thin films to annealing temperature became studied. The structural properties were determined via using the X-ray diffraction technique. Annealed thin films show orthorhombic structures. Crystallinity, grain size, volume of unit cell increases as the annealing temperature changes to 473 K. Some new peaks arise in the annealed thin films. Morphological studies show the dimension of the sphere gets enlarged as the annealing temperature surges. Optical absorption suggests an increase in absorptivity with annealing temperature. The optical gap become observed to be 2.13 and 1.90 eV for thin film annealed at 348 and 473 K, respectively. The electrical conductance, thermoelectrical power, carrier mobility of annealed thin films increases with the rise in heating temperature.

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