Abstract
We have investigated the structural, optical and magnetic properties of high quality epitaxial Zn 1− x Mn x O (diluted magnetic semiconductor) films. These films were deposited on (0001) sapphire substrate by a pulsed laser deposition technique. The nonequilibrium nature of the laser–material interaction allowed us to dope higher Mn contents ( x=0.36) than allowed by thermal equilibrium limit ( x∼0.13). All the films investigated here were found to be single phased and epitaxial with (0001) orientation. As the Mn concentration increases in the system, the c-axis lattice constant was found to increase linearly. Optical transmittance study showed an increase in the insulating band-gap ( E g) with increase in Mn atomic fraction x following E g =3.270+2.760x−4.988x 2 eV. DC magnetization measurements showed the paramagnetic nature of the system.
Published Version
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