Abstract
In the present study of AlGaN/GaN heterostructures with high quality AlN interlayer (AlN-IL) were grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The AlN inter-layer thickness was varied as 1, 2 and 3 nm. The High-resolution X-ray diffraction (HRXRD) FWHM for (002) plane of GaN was measured for AlGaN/GaN with different AlN-IL thickness. The surface roughness was measured using Atomic Force Microscope (AFM). The Photoluminescence (PL) band edge emission, the room temperature and low temperature hall measurement show the enhancement of two-dimensional electron gas (2DEGs) sheet carrier density due to AlN-IL. The results have been discussed in detail.
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