Abstract
The crack-free Si-doped n-Al0.28Ga0.72N epitaxial films with high-temperature (HT) AlN interlayer were successfully grown on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (XRD) measurement results demonstrate that the density of dislocations was reduced significantly with the insertion of the HT-grown AlN interlayer between the low-temperature (LT)-grown AlN buffer layer and the n-AlGaN epitaxial film. Room temperature (RT) Raman scattering spectra show a blue-shift for the E2 (high) phonon mode, implying that the Si-doped n-Al0.28Ga0.72N epitaxial film is under compressive strain. Moreover, the photoluminescence (PL) peak position slightly red-shifted from 311 to 315nm, while the PL intensity decreased remarkably as the temperature was increased from 10 to 300K. The Hall effect measurement results reveal that a carrier density in the Si-doped n-Al0.28Ga0.72N epitaxial film as high as 6.84×1018cm−3 has been achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Optik - International Journal for Light and Electron Optics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
