Abstract
ABSTRACT In the present work, SnxSy thin films have been deposited into heated glass substrates at 350°C from different molar concentrations (x = 0.05M, y = 0; 0.03; 0.05; 0.07; 0.1M) by means of a spray pyrolysis technique. Firstly, it was found that optimum molar concentration of the precursor to obtain device quality SnS thin film is x = 0.05 M and y = 0.05 M. Moreover, the findings detected by X-ray diffraction (XRD) analysis show that the film crystallized in the orthorhombic crystal structure with a preferred grain orientation along (111) plane. Furthermore, the optical characterization revealed that the average optical transmission had been significantly reduced and the band gap value is 1.8 eV as well as a very high absorption coefficient (105/cm). Besides, the electrical properties study exhibited that the sample is p-type and the value of the electrical resistivity of SnS film is 2.75 × 10−2 (Ω.cm).
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