Abstract
Thin films of indium doped cadmium oxide were deposited on quartz substrate using pulsed laser deposition technique. The effect of growth temperature and partial oxygen pressure on structural, optical and electrical properties was studied. We find that the optical transparency of the films largely depends on the growth temperature, while partial oxygen pressure has virtually no effect on the transparency of the films. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. It is observed that conductivity and carrier concentration decreases with temperature. The film grown at 200 °C under an oxygen pressure of 5.0 × 10 − 4 mbar shows high mobility (155 cm 2/V s), high carrier concentration (1.41 × 10 21 cm 3), and low resistivity (2.86 × 10 − 5 Ω cm).
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