Abstract
Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane( 1 1 2 ¯ 0 ) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 μ B/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly.
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