Abstract
Nonpolar GaN:Mn films have been fabricated by implanting Mn-ion into nonpolar a-plane (112̅0) GaN films at room temperature. The influence of implantation energy on the structural, morphological and magnetic characteristics of samples have been investigated by means of stopping and range of ions in matter (SRIM) simulation software, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). According to the SQUID analysis, obvious room temperature ferromagnetic properties of samples were detected. Moreover, the implantation energy has little impact on the ferromagnetic properties of samples. The XRD and AFM analyses show that the structural and morphological characteristics of samples were severely deteriorated with the increase of implantation energy.
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