Abstract
Structural properties of short period GaInAs/InP superlattices prepared by organometallic vapor phase epitaxy are investigated with Raman scattering. The observation of as many as five orders of folded longitudinal acoustic doublets attests to the structural quality of the superlattices. Well and barrier relative layer thicknesses and superlattice period are estimated from analysis of doublet intensity and position, respectively. Examination of the optic modes reveals that the well is comprised of two separate layers: a GaInAsP layer under tension near the barrier/well interface and a GaInAs layer under compression near the well/barrier interface. Finally, the Raman results are confirmed by simulation of double crystal x-ray diffraction spectra from the short period structures.
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