Abstract
We compare the material properties of Hg1-xCdxTe grown by conventioanal organometallic vapor phase epitaxy (OMVPE) with those obtained interdiffused multilayer OMVPE. Both are compared with material properties of state-of-the-art LPE Hg1-xCdxTe grown from Te-rich solutions. The Hg1-xCdxTe layers were grown on bulk CdTe, sapphire (Al2O3) and GaAs substrates. Layers were characterized by optical microscopy, IR transmission, Hall effect, double crystal X-ray diffraction, electron microprobe and secondary ion mass spectroscopy (SIMS). Better crystallinity and smoother morphologies are obtained by conventional OMVPE; interdiffused multilayer OMVPE currently results in better compositional uniformity and reproducibility. The observed differences can be interpreted on the basis of growth kinetics. Both techniques yield Hg1-xCdxTe epitaxial layers with LPE-like qualities.
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