Abstract
Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization.
Highlights
Development of modern IR photonics brings up the challenges of searching new functional media for effective transfer of wide-spectra electro-magnetic radiation and developing of novel miniaturization technologies of passive and active photonic elements
It is known that the nearest atomic environment in glass matrix can be adequately studied using numerous experimental methods such as vibration and Raman scattering spectroscopy, X-ray diffraction (XRD), scanning electron microscopy etc. [10]
Since the stoichiometric GeSe2 phase is outside glass formation [12] in future it will be formed in a separate crystalline phase
Summary
Development of modern IR photonics brings up the challenges of searching new functional media for effective transfer of wide-spectra electro-magnetic radiation and developing of novel miniaturization technologies of passive and active photonic elements (optical waveguides, resonators, splitters, multiplexers, detectors, signal amplifiers and converters, comparators etc). The aim of this work is the investigation of crystallization processes and features formation of crystalline phases in 80GeSe2-20Ga2Se3 chalcogenide glasses under different durations of thermal annealing above the glass transition temperature using XRD and atomic force microscopy (AFM) methods. In the 80GeSe220Ga2Se3 ChG annealed for 25 h and 50 h the well-formed peaks of GeGa4Se8, Ga2Se3 and GeSe2 phases appear.
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