Abstract
Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated AsxS100−x (x=30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
