Abstract
Peculiarities of the real structure of Ge(Ga) single crystals grown under external mechanical perturbations of the crystallization process simulating actual microgravity environment aboard spacecrafts were investigated by X-ray topography and diffractometry methods, etching analysis and spreading resistance measurements. The applied perturbations included vibrations and variations of growth facility orientation with respect to the direction of gravity force. It has been shown that microinhomogeneity of the crystals grown is defined not only by formation of dopant growth striations at peculiar vibrational perturbations of a melt, but also by specific features of dislocation structure of crystals related with the formation of small angle boundaries, slip bands and other inhomogeneities in dislocation distribution. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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