Abstract
Hydrogenated microcrystalline silicon films without an amorphous incubation layer were deposited on glass substrates at a high rate and a low temperature by a jet-type inductively coupled plasma chemical vapor deposition technique. It was observed that the amorphous incubation layer present at the initial stage of the deposition gradually crystallized during the growth process, and an almost completely crystallized layer was obtained. It is believed that abundant hydrogen atoms with sufficient energy diffuse into the incubation layer and subsequently annealing through a hydrogen mediated chemical reaction to induce the structural evolution of the incubation layer.
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