Abstract
Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the µc-Si:H films were investigated using Raman scattering spectroscopy and the details of the interface structure were observed by high resolution transmission electron microscope. We had found that µc-Si:H film on the SiNx layer treated by O2 plasma has good interface quality. The highly crystallized µc-Si:H films with no amorphous incubation layer at interface of Si/SiNx could be directly deposited on the SiNx layer.
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