Abstract
Strain relaxation mechanisms for the growth of m-layers of In0.18Ga0.82As/GaAs on a GaAs(100) substrate, tilted 2° towards the [0–11] direction, have been studied by molecular beam epitaxy (MBE) and atomic force microscopy (AFM). While dislocations alone provide a strain relaxation mechanism for nominal GaAs(100), additional strain relaxation mechanisms were observed for a vicinal GaAs(100) substrate. For m ⩽ 8, step bunching provided a mechanism for strain relaxation. For m ⩾10, in addition to the step bunching, bunched corners along two [051] and [0–1–5] directions provided the mechanism for strain relaxation. These surface patterns provide potential to act as a template for the growth of more uniform and organized nanostructures. For m = 16, the formation of dislocations provided an additional route for strain relaxation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
