Abstract
The structural evolution in Ge+ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(001) wafers were implanted with 5keV Ge+ to a dose of 5×1015 ions/cm2. A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350°C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400°C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350°C. The results are discussed in terms of energy variation in the system.
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