Abstract
The pure and Zr-doped BiFeO3 thin films were fabricated on Pt/TiO2/SiO2/Si substrates by sol-gel method. The microstructural characterization revealed a phase structural transition from rhombohedral structure to tetragonal structure in Zr-doped BiFeO3 thin films. Compared with pureBiFeO3 thin film, the Zr-doped BiFeO3 thin films showed better dielectric and leakage current characteristics. The mechanism associated with the enhancement of the electrical properties of the thin films is also discussed.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call