Abstract
We have structurally evaluated β-Ga2O3 crystals grown by edge-defined film-fed growth process using etch pitting, focused ion beam scanning ion microscopy, transmission electron microscopy, and related techniques. We found three types of defects: arrays of edge dislocations corresponding to etch pit arrays on -oriented wafers, platelike nanopipes corresponding to etch pits revealed on the (010)-oriented wafers, and twins including twin lamellae.
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