Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth

Abstract

In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m−1 at 300 K is much higher than σ [0.44–1526 S m−1, Chen et al., Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al., Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.