Abstract
In this study, structurally uniform PbTe nanowires (NWs) with high-quality single crystals were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grew along the [100] direction. The thermoelectric power S of a 142-nm diameter NW plotted for temperature range of 300-350 K exhibited semiconductor n-type behavior. The absolute S plotted against carrier concentration n was size- dependent, compared with our previous work.
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