Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.

Ming-Cheng Kao,Jen-Bin Shi,Kai-Huang Chen,San-Lin Young,Jung-Lung Chiang,Hone-Zern Chen

doi:10.3390/ma10111327

Abstract

Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm3 and 62 μC/cm2, respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.

Highlights

Multiferroic/Ferroelectric (MF/FE) composite thin films have attracted considerable attention owing to their unique and exciting properties, which result from their combination of both ferroelectric and ferromagnetic materials [1–5]
We report the fabrication of MF/FE bilayer thin films composed of Bi0.8Pr0.2Fe0.95Mn0.05O3 and Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) structures and the fabrication of MF/FE-based resistive random-access memory (RRAM)
High-quality multiferroic and ferroelectric BPFMO/BGTWO bilayer thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates

Summary

Introduction

Multiferroic/Ferroelectric (MF/FE) composite thin films have attracted considerable attention owing to their unique and exciting properties, which result from their combination of both ferroelectric and ferromagnetic materials [1–5]. These composite materials exhibit novel properties, such as electro-optic and electro-magnetic coupling, and show great potential for use in many applications, including data storage, sensors, actuators, transducers and resistive random-access memory (RRAM) [6–8]. Multiferroic materials are well-known to simultaneously possess ferromagnetism and ferroelectricity, exhibiting spontaneous polarization and magnetization that can be reoriented by electric and magnetic fields, respectively [9–12]. FE Bi4 Ti3 O12 (BTO) thin films are promising candidates for use in FeRAM applications owing to their large remnant polarization and good fatigue-free properties.

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Results

Conclusion