Abstract
lead antimony sulfide (PbSb2S5) thin films were successfully grown on an n-Si substrate by a thermal evaporation technique. The XRD spectrum clarifies the orthorhombic structure of the prepared PbSb2S5 thin films and the EDX analysis specifies that its composition is near stoichiometric. In the dark conditions, I-V characteristics of the PbSb2S5/n-Si heterojunction were utilized to determine the barrier height (ϕb), diode ideality factor (n), and both series and shunt resistances. The C-V characteristic analysis shows that the prepared PbSb2S5/n-Si heterojunction is an abrupt junction. The power conversion efficiency of the prepared heterojunction has been calculated from the J-V characteristics under illuminations and was found to be 3.72%.
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